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8.3 Amorphous selenium used as a semiconductor material exhibits unusual diffusion characteristics. The following is a set of experimental data for self-diffusion in amorphous selenium. Calculate D0 and Q and comment on your results. T, °C D, m2 s–1 35 7.7 10–16 40 2.4 10–15 46 3.2 10–14 56 3.2 10–13
8.10 An Al-4% Cu alloy is heated to 550°C during heat treatment and quenched to room temperature. Immediately after quench, the diffusion rate of Problems 197 copper (which proceeds by a vacancy mechanism) was found to be 107 times faster than what would be expected from the listed diffusion data. What fraction of vacancies in equilibrium at 550°C is retained at room temperature by the rapid quenching? The enthalpy of motion of vacancy in this alloy is 50 kJ mol–1.
8.13 Find the grain size of a polycrystalline solid for the same amount of material to be transported through (i) the grain and (ii) the grain boundary at 500°C. Assume that the grains are cube shaped and the grain boundaries are 5 Å thick. For lattice diffusion: D0 = 0.7 10–4 m2 s–1 Q = 188 kJ mol–l For grain boundary diffusion: D0 = 0.09 10–4 m2 s–1 Q = 90 kJ mol–l
8.17 An amount Q of a dopant is deposited on the surface of a silicon substrate. During a subsequent anneal without the dopant in the atmosphere, the concentration c of the dopant as a function of depth x and time t is given by c = (Q/ DT ) exp [–x2/(4Dt)] Show that this is a solution of Fick’s Second Law, when D is independent of concentration.
8.18 A steel containing 0.002% N is to be nitrided to yield a nitrogen content of 0.12% at depth of 4 mm from the surface. The nitriding atmosphere is equivalent to a surface concentration of 0.35% N. How long is to be the nitriding process? The steel is BCC ( ) at the nitriding temperature of 700°C.
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